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 MBRM120L Surface Mount Schottky Power Rectifier
POWERMITE(R) Power Surface Mount Package
The Schottky Powermite(R) employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite(R) has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC-DC and DC-DC converters, reverse battery protection, and "ORing" of multiple supply voltages and any other application where performance and size are critical.
Features http://onsemi.com
SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 20 VOLTS
CATHODE
ANODE
* * * * * * * * * * * *
POWERMITE CASE 457 PLASTIC
Low Profile - Maximum Height of 1.1 mm Small Footprint - Footprint Area of 8.45 mm2 Low VF Provides Higher Efficiency and Extends Battery Life Supplied in 12 mm Tape and Reel Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink ESD Ratings: Human Body Model, 3B u 16000 V Machine Model, C u 400 V Pb-Free Packages are Available Powermite(R) is JEDEC Registered as D0-216AA Case: Molded Epoxy Epoxy Meets UL 94 V-0 @ 0.125 in Weight: 16.3 mg (Approximately) Lead and Mounting Surface Temperature for Soldering Purposes: 260C Maximum for 10 Seconds
MARKING DIAGRAM
M BCF G
Mechanical Characteristics:
M = Date Code BCF = Device Code G = Pb-Free Package
ORDERING INFORMATION
Device MBRM120LT1 Package Shipping
POWERMITE 3000/Tape & Reel
MBRM120LT1G POWERMITE 3000/Tape & Reel (Pb-Free) MBRM120LT3 POWERMITE 12000/Tape & Reel
MBRM120LT3G POWERMITE 12000/Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2007
1
February, 2007 - Rev. 6
Publication Order Number: MBRM120L/D
MBRM120L
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 135C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 135C) Non-Repetitive Peak Surge Current (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) Storage Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Symbol VRRM VRWM VR IO IFRM IFSM Tstg TJ dv/dt Value 20 Unit V
1.0 2.0 50 -55 to 150 -55 to 125 10,000
A A A C C V/ms
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Lead (Anode) (Note 1) Thermal Resistance, Junction-to-Tab (Cathode) (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Rtjl Rtjtab Rtja 35 23 277 C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10.
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 3.0 A) Maximum Instantaneous Reverse Current (Note 2), See Figure 4 (VR = 20 V) (VR = 10 V) 2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%. IR VF TJ = 25C 0.34 0.45 0.65 TJ = 25C 0.40 0.10 TJ = 85C 0.26 0.415 0.67 TJ = 85C 25 18 mA V
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
10 TJ = 125C
10
TJ = 85C 1.0 TJ = 25C
TJ = 125C 1.0 TJ = 85C
TJ = -40C 0.1 0.1 0.3 0.5 0.7 0.9 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
TJ = 25C 0.1 0.1 0.3 0.5 0.7 0.9 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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2
MBRM120L
10E-3 IR, REVERSE CURRENT (AMPS) IR, MAXIMUM REVERSE CURRENT (AMPS) 100E-3
1.0E-3
TJ = 85C
10E-3 TJ = 85C 1.0E-3
100E-6
10E-6
TJ = 25C
100E-6 TJ = 25C 10E-6 0 5.0 10 15 VR, REVERSE VOLTAGE (VOLTS) 20
1.0E-6 0 5.0 10 15 VR, REVERSE VOLTAGE (VOLTS) 20
Figure 3. Typical Reverse Current
PFO, AVERAGE POWER DISSIPATION (WATTS) IO, AVERAGE FORWARD CURRENT (AMPS) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25 35 45 55 65 75 85 95 105 TL, LEAD TEMPERATURE (C) 115 125 Ipk/Io = 10 Ipk/Io = 20 SQUARE WAVE Ipk/Io = p Ipk/Io = 5 dc 0.7 0.6 0.5
Figure 4. Maximum Reverse Current
FREQ = 20 kHz
Ipk/Io = p Ipk/Io = 5 Ipk/Io = 10
SQUARE WAVE
dc
0.4 Ipk/Io = 20 0.3 0.2 0.1 0 0 0.4 0.8 1.2 1.0 0.2 0.6 1.4 IO, AVERAGE FORWARD CURRENT (AMPS)
1.6
Figure 5. Current Derating
1000
Figure 6. Forward Power Dissipation
TJ, DERATED OPERATING TEMPERATURE (C)
125 115 105 Rtja = 33.72C/W 95 85 75 65 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 VR, DC REVERSE VOLTAGE (VOLTS) 119C/W 204C/W 277.35C/W 338C/W
C, CAPACITANCE (pF)
TJ = 25C
100
10 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax - r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax - r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed.
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3
MBRM120L
R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 50% 20% 0.1 10% 5.0% 2.0% 1.0% Rtjl(t) = Rtjl*r(t) 0.001 0.00001
0.01
0.0001
0.001
0.01 T, TIME (s)
0.1
1.0
10
100
Figure 9. Thermal Response Junction to Lead
R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 50% 20% 0.1 10% 5.0% 0.01
2.0% Rtjl(t) = Rtjl*r(t)
1.0% 0.001 0.00001 0.0001
0.001
0.01
0.1 T, TIME (s)
1.0
10
100
1,000
Figure 10. Thermal Response Junction to Ambient
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4
MBRM120L
PACKAGE DIMENSIONS
POWERMITE CASE 457-04 ISSUE D
F 0.08 (0.003)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. DIM A B C D F H J K L R S MILLIMETERS INCHES MIN MAX MIN MAX 1.75 2.05 0.069 0.081 1.75 2.18 0.069 0.086 0.85 1.15 0.033 0.045 0.40 0.69 0.016 0.027 0.70 1.00 0.028 0.039 -0.05 +0.10 -0.002 +0.004 0.10 0.25 0.004 0.010 3.60 3.90 0.142 0.154 0.50 0.80 0.020 0.031 1.20 1.50 0.047 0.059 0.50 REF 0.019 REF
-A-
C J S
M
TB
S
C
S
TERM. 1
-B- K
TERM. 2
R L J H -T- 0.08 (0.003)
M
D TB
S
C
S
SOLDERING FOOTPRINT*
0.635 0.025 2.67 0.105 0.762 0.030
2.54 0.100
1.27 0.050
SCALE 10:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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5
MBRM120L/D


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